N-Type 210x210mm

G-STAR Pte. Ltd.
填充因子
填充因子
81.88 - 84.04 %
电池片效率
电池片效率
24.7 - 25.8 %
电 池 技 术
技术
TOPCon
功率范围
功率范围
10.892 - 11.377 Wp
地区
地区
新加坡 新加坡
组件尺寸
尺寸
210x210 mm
电池片厚度
电池片厚度
130 ± 13 µm
栅线数
栅线数
18
栅线宽度
栅线宽度
0.04±0.03 mm
焊垫数
焊垫数
18
焊垫宽
焊垫宽
0.04±0.03 mm
焊垫材料
焊垫材料
联系生产商
注意: 您的询盘将直接发送至G-STAR Pte. Ltd.

High Photoelectric, Conversion Efficiency

Excellent Resistance to Hidden Cracks

Automated & intelligent production lines for quality and on-time delivery

Full-process traceability

产品特点

产品型号
10.892 10.936 10.98 11.024 11.068 11.112 11.256 11.2 11.244 11.289 11.333 11.377
电池片技术 TOPCon
尺寸 210x210 mm
电池片厚度 130 ± 13 µm
 
栅线数 18
栅线宽度 0.04±0.03 mm
栅线材料
减反射膜 氮化硅
 
焊垫数 18
焊垫宽 0.04±0.03 mm
焊垫材料
 
峰值功率 (Pmax)
10.892 W 10.936 W 10.98 W 11.024 W 11.068 W 11.112 W 11.156 W 11.2 W 11.244 W 11.289 W 11.333 W 11.377 W
峰值工作电压 (Vmpp)
0.625 V 0.626 V 0.627 V 0.628 V 0.629 V 0.63 V 0.631 V 0.62 V 0.633 V 0.634 V 0.635 V 0.636 V
峰值工作电流 (Impp)
17.426 A 17.469 A 17.512 A 17.554 A 17.596 A 17.638 A 17.68 A 17.722 A 17.764 A 17.805 A 17.847 A 17.887 A
开路电压 (Voc)
0.723 V 0.724 V 0.725 V 0.726 V 0.727 V 0.728 V 0.729 V 0.73 V 0.73 V 0.732 V 0.732 V 0.732 V
短路电流 (Isc)
18.398 A 18.418 A 18.427 A 18.439 A 18.447 A 18.454 A 18.467 A 18.474 A 18.485 A 18.494 A 18.494 A 18.494 A
电池片效率
24.7 % 24.8 % 24.9 % 25 % 25.1 % 25.2 % 25.3 % 25.4 % 25.5 % 25.6 % 25.7 % 25.8 %
填充因子 (FF)
81.88 % 82.01 % 82.19 % 82.35 % 82.53 % 82.71 % 82.87 % 83.05 % 83.22 % 83.39 % 83.72 % 84.04 %
 
温度系数(Pmax) -0.32 %/˚C
温度系数(Voc) -0.26 %/˚C
温度系数(Isc) 0.04 %/˚C
 
下载公司产品详情

G-STAR Pte. Ltd.

Click to show company phone
https://www.gstarsolar.com
新加坡
60 Paya Lebar Road #06-12 Paya Lebar Square Singapore 409051
母公司: Standard Energy
注意: 您的询盘将直接发送至G-STAR Pte. Ltd.
公司描述

G-STAR, founded in 2019 and headquartered in Singapore, is committed to being a trusted global provider of clean energy solutions. With a focus on both PV material manufacturing and PV system services, G-STAR aims to develop sustainable clean energy ecosystems worldwide.

G-STAR maintains a global strategy with a "1+N" model, one headquarters in Singapore, with N bases covering the United States, China, India, Mexico, Thailand, Indonesia, Laos, the Philippines, and Egypt. By 2025, G-STAR's integrated production capacity in Southeast Asia is expected to reach 3GW, and the total capacity is 17.5GW.

G-STAR's PV material manufacturing business primarily focuses on the production and processing of silicon materials, including silicon pulling and N-type silicon wafers, as well as metal materials production, including frames and mounting systems. The PV system services encompass the manufacturing of solar modules using N-type technology, providing a comprehensive range of PV products, from R&D to production and sales, catering to global markets including North America, Europe, the Asia-Pacific region, and Africa.

By integrating the PV supply chain to shape an integrated solar future, G-STAR is dedicated to pioneering a sustainable energy landscape that harnesses the full potential of solar power, fostering a brighter, cleaner, and more interconnected world.

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